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Freescale Semiconductor Technical Data
Document Number: MRF6V4300N Rev. 0, 7/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. * Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 450 MHz Power Gain -- 22 dB Drain Efficiency -- 60% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power Features * Qualified Up to a Maximum of 50 VDD Operation * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Excellent Thermal Stability * Facilitates Manual Gain Control, ALC and Modulation Techniques * 200C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V4300NR1 MRF6V4300NBR1
10 - 600 MHz, 300 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V4300NR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V4300NBR1 PARTS ARE SINGLE - ENDED
RFin/VGS
RFout/VDS
RFin/VGS
RFout/VDS
(Top View) Note: Exposed backside of the package is the source terminal for the transistor.
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +110 - 6.0, +10 - 65 to +150 150 200 Unit Vdc Vdc C C C
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6V4300NR1 MRF6V4300NBR1 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 83C, 300 W CW Symbol RJC Value (1) 0.24 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 150 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 800 Adc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 2.8 105 304 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 0.9 1.9 -- 1.65 2.7 0.25 2.4 3.4 -- Vdc Vdc Vdc IGSS V(BR)DSS IDSS IDSS -- 110 -- -- -- -- -- -- 10 -- 50 2.5 Adc Vdc Adc mA Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 450 MHz, CW Power Gain Gps 20 22 24 Drain Efficiency Input Return Loss D IRL 58 -- 60 - 16 -- -9
dB % dB
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices.
MRF6V4300NR1 MRF6V4300NBR1 2 RF Device Data Freescale Semiconductor
B3 VSUPPLY B1 VBIAS + C1 C7 C4 C8 R1 L4 C13 RF OUTPUT L2 C9 C5 C2
C12 RF INPUT
L1
Z7 Z6
Z8
Z9
C20 Z10
C21
C22 Z11
C25
C26 Z12 C15
Z13
Z1 C11
Z2
Z3
Z4
Z5
C19 C16 C17 C18 DUT L5 C14
C23
C24
C27
C28
L3 C10 C6 B2 C3 VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.900 x 0.082 Microstrip 0.115 x 0.170 Microstrip 0.260 x 0.170 Microstrip 0.380 x 0.170 Microstrip 0.220 x 0.220 Microstrip 0.290 x 0.630 Microstrip 0.220 x 0.630 Microstrip Z8 Z9 Z10 Z11 Z12 Z13 PCB 0.380 x 0.220 Microstrip 0.040 x 0.170 Microstrip 0.315 x 0.170 Microstrip 0.230 x 0.170 Microstrip 0.390 x 0.170 Microstrip 0.680 x 0.082 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 2. MRF6V4300NR1(NBR1) Test Circuit Schematic
Table 6. MRF6V4300NR1(NBR1) Test Circuit Component Designations and Values
Part B1 B2, B3 C1 C2, C3 C4, C5, C6, C7 C8, C9, C10 C11, C12, C13, C14, C15 C16 C17 C18 C19, C20 C21, C22, C23, C24 C25, C26, C27, C28 L1 L2, L3 L4, L5 R1 Short Ferrite Bead Long Ferrite Beads 47 F, 25 V, Tantalum Capacitor 22 F, 50 V, Chip Capacitors 1 F, 100 V, Chip Capacitors 15 nF, 100 V, Chip Capacitors 240 pF, Chip Capacitors 9.1 pF, Chip Capacitor 15 pF, Chip Capacitor 51 pF, Chip Capacitor 5.6 pF, Chip Capacitors 4.3 pF, Chip Capacitors 4.7 pF, Chip Capacitors 27 nH Inductor 47 nH Inductors 5 Turns, #18 AWG Inductors, Hand Wound 10 , 1/4 W, Chip Resistor Description Part Number 2743019447 2743021447 T491B476M025AT C5750JF1H226ZT C3225JB2A105KT C3225CH2A153JT ATC100B241JT500XT ATC100B9R1JT500XT ATC100B150JT500XT ATC100B510JT500XT ATC100B5R6JT500XT ATC100B4R3JT500XT ATC100B4R7JT500XT 1812SMS - 27NJLC 1812SMS - 47NJLC Copper Wire CRCW120610R1FKEA Vishay Manufacturer Fair - Rite Fair - Rite Kemet TDK TDK TDK ATC ATC ATC ATC ATC ATC ATC Coilcraft Coilcraft
MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 3
C1
C7
B1 C4 C8 L2 R1 C12 C13 C20
ATC
B3
C2
C9 C5
L1 C11 CUT OUT AREA L4 L5
C21 C22 C25 C26
C15
C16
C17
C18
C19 C14 L3
C23 C24 C27 C28
MRF6V4300N/NB Rev. 1 C10 C6
B2
C3
Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout
MRF6V4300NR1 MRF6V4300NBR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 Ciss ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 100
100
Coss Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc
10
10
Crss
TC = 25C 1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 1 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100
Figure 4. Capacitance versus Drain - Source Voltage
10 9 ID, DRAIN CURRENT (AMPS) 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 DRAIN VOLTAGE (VOLTS) 2.25 V 18 10 2.63 V 2.5 V 2.75 V Gps, POWER GAIN (dB) VGS = 3 V 22 23
Figure 5. DC Safe Operating Area
IDQ = 1350 mA 1125 mA
21 900 mA 20
450 mA 19
650 mA VDD = 50 Vdc f = 450 MHz 100 Pout, OUTPUT POWER (WATTS) CW 600
Figure 6. DC Drain Current versus Drain Voltage
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 10 60 VDD = 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz Two-Tone Measurements, 100 kHz Tone Spacing Pout, OUTPUT POWER (dBm) 59 58 57 56 55 54 53 52 51 1125 mA 100 Pout, OUTPUT POWER (WATTS) PEP 600 50 28
Figure 7. CW Power Gain versus Output Power
IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
P3dB = 56.06 dBm (403 W)
Ideal
P1dB = 55.15 dBm (327 W) Actual
IDQ = 450 mA 650 mA 900 mA 1350 mA
VDD = 50 Vdc, IDQ = 900 mA f = 450 MHz 29 30 31 32 33 34 35 36 37 38
Pin, INPUT POWER (dBm)
Figure 8. Third Order Intermodulation Distortion versus Output Power
Figure 9. CW Output Power versus Input Power
MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
23 22 21 20 19 40 V 18 17 16 0 25 V VDD = 20 V 50 100 150 200 250 30 V 35 V IDQ = 900 mA f = 450 MHz 300 350 400 45 V 50 V Pout, OUTPUT POWER (dBm) 55 Gps, POWER GAIN (dB) 60 25_C TC = -30_C 85_C 50
45 VDD = 50 Vdc IDQ = 900 mA f = 450 MHz 20 25 30 35 40
40 35 15
Pout, OUTPUT POWER (WATTS) CW
Pin, INPUT POWER (dBm)
Figure 10. Power Gain versus Output Power
25 24 Gps, POWER GAIN (dB) 23 Gps 22 25_C 21 85_C 20 19 18 10 D TC = -30_C 85_C
Figure 11. Power Output versus Power Input
80 25_C 70 60 50 -30_C 40 30 VDD = 50 Vdc IDQ = 900 mA f = 450 MHz 100 20 10 500 D, DRAIN EFFICIENCY (%)
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency versus CW Output Power
MRF6V4300NR1 MRF6V4300NBR1 6 RF Device Data Freescale Semiconductor
Zsource f = 450 MHz Zo = 10 f = 450 MHz Zload
VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW f MHz 450 Zsource W 0.40 + j5.93 Zload W 1.42 + j5.5
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
MRF6V4300NR1 MRF6V4300NBR1 8 RF Device Data Freescale Semiconductor
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MRF6V4300NR1 MRF6V4300NBR1 10 RF Device Data Freescale Semiconductor
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MRF6V4300NR1 MRF6V4300NBR1 12 RF Device Data Freescale Semiconductor
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date July 2008 * Initial Release of Data Sheet Description
MRF6V4300NR1 MRF6V4300NBR1 14 RF Device Data Freescale Semiconductor
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MRF6V4300NR1 MRF6V4300NBR1
Document Number: RF Device Data MRF6V4300N Rev. 0, 7/2008 Freescale Semiconductor
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